, l/ nc. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 high speed silicon controlled rectifier C364/c3s5 600 volts 275 a rms amplifying gate C364 and c365 silicon controlled rectifiers are de- signed tor power switching at high frequencies. these are all-diffused press- pak devices employing the field-proven amplifying gate. features: ? fully characterized for operation in inverter and chopper applications. ? high di/dt ratings. ? high dv/dt capability with selections available. ? rugged hermetic glazed ceramic package. maximum allowable ratings types C364/c365a C364/c365b C364/c365c C364/c365d C364/c365e C364/c365m c365s c365n repetitive peak off-state voltage, vdrm' . . tj ? -40c to +125c 100 volts 200 300 400 500 600 700 800 repetitive peak reverse voltage. vrrml tj - -40c to +125c 100 volts 200 300 400 500 600 700 800 non-repetitive peak reverse voltage, vrsm ' tj = +125c 200 volts 300 400 500 600 720 840 960 1 half sincwavo waveform, 10 ms max. pulse width. rms on-state current, it(rms) 275 amperes peak one cycle surge (non-repetitive) on-state current, itsm (60 hz) 1800 amperes peak one cycle surge (non-repetitive) on-state current, itsm (50 hz) 1700 amperes i2t (for fusing) for times > 1.5 milliseconds 9,500 (rms ampere)2 seconds i2t (for fusing) for times > 8.3 milliseconds 13,500 (rms ampere): seconds critical rate-of-rise of on-state current, non-repetitive nod a //as f critical rate-of-rise of on-state current, repetitive average gate power,dissipation, pg(av) ? storage temperature, tstg operating temperature, tj mounting force required a./as t ,: watts ? i50c i:5c ? 10% ? 10% nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verity that datasheets are current before placing orders. quality semi-conductors
C364/c365 characteristics test repetitive peak reverse ami off-stale current repetitive peak reverse ami oit-slau- current thermal resistance critical rate-ol'-kisc o!' off-state voltage (higher values may cause device switching) symbol 1 ]< k m and 'hum 1 r r m and 'm4 c365 lq(dioil<.-) C364 c365 min. - 200 typ. 5 12 .12 .15 500 max. 12 17 .135 .20 units 111 a ma c/\vatt v/jusoc test condition tj = +25c v = vdkm = vkrm tj = 125c v = vorm = vrrm junction-to-case (double-side. cooled) junction-lo-case (single-side cooled) tj = +125c, gate open. vdkm = rated linear or hxponential rising waveform. lixponential dv/dt = vdrm (.632)/7 >er niiniiiuini ilv/dl selections available - consult factory. - - 0.15 -? - 40 70 100 25 3 1.25 1.9 0.5 8 '15 15 20 1000 250 400 175 5 3.0 2.6 10 20 t t mado m ad c vdc volts msec msec msec tc = +25c, anode supply = 24 vdc. initial on-state current = 2 amps. tc = +25c, v,, = 6 vdc, rl = 3 ohms tc = -40c, vd = 6 vdc, rl = 3 ohms tc - +125c, v0 = 6 vdc, r,, = 3 ohms tc = -40c to 0uc, vd = 6 vdc, rl = 3 oil ins tc = 0c to +125c, vd = 6 vdc, rl = 3 ohms tc = 125c, vdkm, rl = 1000 ohms tc. = +25c, itm = 500 amps. peak duty cycle < .01% tc = +25c, it = 50 adc, vnrm, gate supply: 20 volt open circuit, 20 ohm, 0.1 msec max. rise time, tt.ttt (1) tc = +125c (2) 1tm = 150 amps. (3) vk = 50 volts min. (4) v,,,tm (re:ippliecl) (5) rate-of-rise of reapplied off-stale voltage = 200 v/msec (linear) (6) commutation di/dt = 5 amps/msec. (7) repetition rale = 1 pps. (8) gate bias during turn-off interval = 0 volts, 100 ohms (1) tc = +125c (2) itm = 150 amps. (3) vk = 1 volt (4) vdrm (reapplied) (5) rale-of-rise of reapplied forward blocking voltage = 200 v/msec (linear) (6) commutation di/dt = 5 amps/jusec (7) repetition rate = 1 pss. (s)' gate bias during turn-off interval = 0 volts, 100 ohms. fcurisiili i'nelnry i'm spceifii'il maximum "i'lini-oit time, ft delay lime may increase signil'ieanlly as the yalo orivc a|>])roa ches (he !(;?[? of (lie ijeviee umler tcsl. risetimc across a non-inductive resistor.
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